SID20N06-90I 19a, 60v, r ds(on) 94 m ? n-channel enhancement mosfet elektronische bauelemente 07-apr-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature sc-59 surface mount package saves board space. ? fast switching speed. ? high performance trench technology. application dc-dc converters, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current 1 t c =25c i d 19 a pulsed drain current 2 i dm 40 a continuous source current (diode conduction) 1 i s 30 a power dissipation 1 t c =25c p d 50 w operating junction and st orage temperature range t j , t stg -55 ~ 175 c thermal resistance data maximum junction to ambient 1 r ja 50 c / w maximum junction to case r jc 3 notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. a c d h g e f k b j p m to-251p ref. millimeter ref. millimeter min. max. min. max. a 6.40 6.80 g 6.00 6.30 b 5.20 5.50 h 0.90 1.50 c 2.20 2.40 j 2.30 d 0.40 0.60 k 0.60 0.90 e 6.80 7.20 m 0.70 1.20 f 4.00 p 0.40 0.60
SID20N06-90I 19a, 60v, r ds(on) 94 m ? n-channel enhancement mosfet elektronische bauelemente 07-apr-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min typ max unit test conditions static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v zero gate voltage drain current i dss - - 1 a v ds =48v, v gs =0 - - 25 v ds =48v, v gs =0, t j =55c on-state drain current 1 i d(on) 30 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 94 m ? v gs =10v, i d =19a - - 109 v gs =4.5v, i d =18a forward transconductance 1 g fs - 22 - s v ds =15v, , i d =19a diode forward voltage v sd - 1.1 - v i s =24a, v gs =0 dynamic 2 total gate charge q g - 3.6 - nc i d =19a v ds =15v v gs =4.5v gate-source charge q gs - 1.8 - gate-drain charge q gd - 1.3 - turn-on delay time td (on) - 16 - ns v dd =25v v gen =10v r l =25 ? i d =24a rise time t r - 5 - turn-off delay time td (off) - 23 - fall time t f - 3 - source-drain reverse recovery time t rr - 50 - ns i f =24a, di/dt=100a/ s notes: 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not s ubject to production testing.
SID20N06-90I 19a, 60v, r ds(on) 94 m ? n-channel enhancement mosfet elektronische bauelemente 07-apr-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
SID20N06-90I 19a, 60v, r ds(on) 94 m ? n-channel enhancement mosfet elektronische bauelemente 07-apr-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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